smd type ic smd type ic features absolute maximum ratings ta = 25 symbol rating unit drain-source voltage 80 v gs 20 continuous drain current (t j = 150 )* t a =25 3.7 t a =70 2.9 pulsed drain current i dm 30 continuous source current (diode conduction) * i s 1.7 a t a =25 2.0 t a =70 1.3 t j ,t stg -55to150 maximum junction-to-ambient* r thja 62.5 /w * surface mounted on fr4 board, t 10 sec. i d parameter operating junction and storage temperature range a p d w maximum power dissipation * v ds v gate-source voltage 4008-318-123 sales@twtysemi.com 1 of 2 http://www.twtysemi.com smd type ic smd type ic KI4980DY smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic product specification
smd type ic smd type ic electrical characteristics ta = 25 parameter symbol testconditons min typ max unit gate threshold voltage v gs(th) v ds =v gs ,i d = 250 a 2 v gate-body leakage i gss v ds =0v,v gs = 20 v 100 na v ds =80v,v gs =0v 1 v ds =80v,v gs =0v,t j =55 20 on-state drain current * i d(on) v ds =5v,v gs =10v 20 a v gs =10v,i d =3.7 a 0.062 0.075 v gs =6.0v,i d = 3.2 a 0.071 0.095 forward transconductance* g fs v ds =15v,i d =3.7a 12 s schottky diode forward voltage* v sd i s =1.7a,v gs =0v 1.2 v total gate charge q g 15 30 nc gate-source charge q gs 4nc gate-drain charge q gd 3.2 nc gate resistance r g 5.1 turn-on delay time t d(on) 10 20 ns rise time t r v dd =40v,r l =40 10 20 ns turn-off delay time t d(off) i d =1a,v gen =10v,r g =6 30 60 ns fall time t f 10 20 ns source-drain reverse recovery time t rr i f = 1.7 a, di/dt = 100 a/ s 75 110 ns * pulse test; pulse width 300 s, duty cycle 2%. v ds =40v,v gs = 10v, i d =3.7a a i dss zero gate voltage drain current r ds(on) drain-source on-state resistance* KI4980DY 4008-318-123 sales@twtysemi.com 2 of 2 http://www.twtysemi.com smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic product specification
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